tept5600 www.vishay.com vishay semiconductors rev. 1.9, 26-nov-14 1 document number: 84768 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ambient light sensor description tept5600 ambient light sensor is a silicon npn epitaxial planar phototransistor in a t-1? package. it is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? high photo sensitivity ? adapted to human eye responsivity ? angle of half sensitivity: ? = 20 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? replacement of cadmium su lfide (cds) photoresistors ? ambient light sensor note ? test condition see table basic characteristics note ? moq: minimum order quantity 94 8390 product summary component i pce (a) ? (deg) 0.5 (nm) tept5600 630 20 440 to 800 ordering information ordering code packaging remarks package form tept5600 bulk moq: 4000 pcs, 4000 pcs/bulk. label with i pce group on each bulk. specifications of group a/b/c/d see table type dedicated characteristics t-1? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emitter voltage v ceo 6v emitter collector voltage v eco 1.5 v collector current i c 20 ma power dissi pation t amb 55 c p v 100 mw junction temperature t j 100 c operating temperature range t amb -40 to +85 c storage temperature range t stg -40 to +100 c soldering temperature t 3 s, 2 mm distance to package t sd 260 c thermal resistance junction/amb ient j-std-051, soldered on pcb r thja 230 k/w
tept5600 www.vishay.com vishay semiconductors rev. 1.9, 26-nov-14 2 document number: 84768 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power diss ipation limit vs. ambient temperature note ? each 4000 piece bag will contain a single group. the label on the bag will indica te which binned group is in the bag. a specif ic group cannot be ordered. production shipment s containing multiple bags will likely include multiple groups. please design accordingly. 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21333 r thja = 230 k/w t amb - ambient temperature (c) p v - power dissipation (mw) basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 0.1 ma v ceo 6v collector dark current v ce = 5 v, e = 0 i ceo 350na collector emitte r capacitance v ce = 0 v, f = 1 mhz, e = 0 c ceo 16 pf photo current e v = 20 lx, cie illuminant a, v ce = 5 v i pce 25 226.8 a e v = 100 lx, cie illuminant a, v ce = 5 v i pce 630 a angle of half sensitivity ? 20 deg wavelength of peak sensitivity p 570 nm range of spectral bandwidth 0.5 440 to 800 nm type dedicated characteristics (t amb = 25 c, unless otherwise specified) parameter test condition binned group symbol min. max. unit photo current e v = 20 lx, cie illuminant a, v ce = 5 v, t amb = 25 c ai pce 25 50.4 a bi pce 41.7 84 a ci pce 69.4 140 a di pce 113.4 226.8 a
tept5600 www.vishay.com vishay semiconductors rev. 1.9, 26-nov-14 3 document number: 84768 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 2 - collector dark current vs. ambient temperature fig. 3 - relative photo current vs. ambient temperature fig. 4 - photo current vs. collector emitter voltage fig. 5 - photo current vs. illuminance fig. 6 - collector emi tter capacitance vs. coll ector emitter voltage fig. 7 - relative spectral sensitivity vs. wavelength 19758 100 80 60 40 20 0 -20 -40 t - ambient temperature (c) amb i - collector dark current (a) ceo 10 10 -6 -7 10 -8 10 -9 10 -10 10 -11 10 -12 10 -13 v ce = 5 v 19759 100 80 60 40 20 0 -20 -40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 i pce rel - relative photo current t amb - ambient temperature (c) v ce = 5 v, white led 20205 0 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 i pce - photo current (a) v ce - collector emitter voltage (v) 200 lx 100 lx 50 lx 20 lx 1 2 5 4 3 20204 e v - illuminance (lx) i pce - photo current (a) 1000 100 10 10 000 1000 100 10 19762 f = 1 mhz c ce0 - collector emitter capacitance (pf) v ce - collector emitter voltage (v) 25 20 15 10 5 0 0.1 1.0 10.0 20019 0.0 0.1 0.2 0.3 0.4 0.5 300 400 500 600 700 800 900 1000 1100 - wavelength (nm) s( ) rel - relative spectral sensitivity 0.6 0.7 0.8 0.9 1.0
tept5600 www.vishay.com vishay semiconductors rev. 1.9, 26-nov-14 4 document number: 84768 for technical questions, contact: detectortechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - relative radiant sensitivity vs. angular displacement package dimensions in millimeters 0.4 0.2 0 s - relative sensitivity rel 94 8624 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement issue:1; 19.06.06 drawing-no.: 6.544-5185.03-4 specifications according to din technical drawings area not plane chip position 0.5 + 0.15 r 2.45 (sphere) 5.75 0.15 7.6 0.15 8.6 0.3 11.8 0.3 34.8 0.5 1.5 0.25 ? 5 0.15 (4.3) < 0.7 0.8 + 0.2 - 0.1 1 + 0.2 - 0.1 0.63 + 0.2 - 0.1 2.54 nom. ce 21981
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